Point Defects in Amorphous and Nanocrystalline Fluorinated Silicon Films
نویسنده
چکیده
Nanocrystalline fluorinated silicon films are studied by using Raman spectroscopy, electron paramagnetic resonance, Fourier-transformed infrared spectroscopy, atomic force microscopy, nonlinear laser spectroscopy, and photoluminescence. Electrical properties of nanocrystalline silicon and amorphous silicon films were compared. The field-assisted migration of point defects is dramatic for durability and reproducibility properties of devices based on amorphous silicon. The conductivity properties are stable for nanocrystalline silicon film by electric field.
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